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  preliminary data this is preliminary information on a new product now in deve lopment or undergoing evaluation. details are subject to change without notice. february 2008 rev 2 1/12 12 std60n10 STP70N10 n-channel 100 v - 0.016 ? - 60 a to-220 / dpak low r ds(on) power mosfet features exceptional dv /dt capability extremely low on-resistance r ds(on) 100% avalanche tested application switching applications description this power mosfet is designed to minimize the r ds(on) , making it suitable for the most applications where high power density is required. figure 1. internal schematic diagram type v dss r ds(on) max i d std60n10 100 v <0.0195 ? 60 a STP70N10 100 v <0.0195 ? 65 a to-220 1 2 3 1 3 dpak table 1. device summary order codes marking package packaging STP70N10 70n10 to-220 tube std60n10 60n10 dpak tape and reel www.st.com
contents STP70N10 - std60n10 2/12 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STP70N10 - std60n10 electrical ratings 3/12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220 dpak v ds drain-source voltage (v gs = 0) 100 v v gs gate- source voltage 20 v i d drain current (continuous) at t c = 25 c 65 60 a i d drain current (continuous) at t c = 100 c 46 43 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 260 240 a p tot total dissipation at t c = 25 c 150 125 w derating factor 1 0.83 w/c dv/dt (2) 2. i sd 50 a, di/dt 600a/s, v dd v (br)dss , t j t jmax. peak diode recovery voltage slope tbd v/ns e as (3) 3. starting t j = 25 c, i d = 50 a, v dd =25 v single pulse avalanche energy tbd mj t stg storage temperature ? 55 to 175 c t j max. operating junction temperature table 3. thermal data symbol parameter value unit to-220 dpak r thj-case thermal resistance junction-case max 1 1.2 c/w r thj-a thermal resistance junction-ambient max 62.5 50 (1) 1. when mounted on fr-4 board of 1 inch2, 2 oz cu c/w t l maximum lead temperature for soldering purpose 300 c
electrical characteristics STP70N10 - std60n10 4/12 2 electrical characteristics (t case =25c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 100 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1 a v ds = max rating,t c =125 c 100 a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 30 a 0.016 0.0195 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 5800 pf c oss output capacitance 300 pf c rss reverse transfer capacitance 190 pf q g total gate charge v dd = 80 v, i d = 60 a, v gs = 10 v (see figure 3) 80 nc q gs gate-source charge 20 nc q gd gate-drain charge 25 nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 50 v, i d = 30 a r g =4.7 ? v gs = 10 v (see figure 2) 125 20 ns ns t d(off) t f turn-off-delay time fall time v dd = 50 v, i d = 30 a, r g =4.7 ?, v gs = 10 v (see figure 2) 60 150 ns ns
STP70N10 - std60n10 electrical characteristics 5/12 table 7. source drain diode symbol parameter test conditions min. typ. max unit i sd source-drain current 60 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) 240 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 60 a, v gs = 0 tbd v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 60 a, v dd = 25 v di/dt = 100 a/s, t j = 150 c (see figure 4) 85 280 6.7 ns nc a
test circuit STP70N10 - std60n10 6/12 3 test circuit figure 2. switching times test circuit for resistive load figure 3. gate charge test circuit figure 4. test circuit for inductive load switching and diode recovery times figure 5. unclamped inductive load test circuit figure 6. unclamped inductive wavefo rm figure 7. switching time waveform
STP70N10 - std60n10 package mechanical data 7/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at : www.st.com
package mechanical data STP70N10 - std60n10 8/12 to-220 mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 b 0.61 0. 88 0.024 0.0 3 4 b 1 1.14 1.70 0.044 0.066 c0.4 9 0.70 0.01 9 0.027 d 15.25 15.75 0.6 0.62 d1 1.27 0.050 e 10 10.40 0. 393 0.40 9 e 2.40 2.70 0.0 9 4 0.106 e1 4. 9 5 5.15 0.1 9 4 0.202 f1.2 3 1. 3 2 0.04 8 0.051 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.0 9 4 0.107 l1 3 14 0.511 0.551 l1 3 .50 3 . 93 0.1 3 7 0.154 l20 16.40 0.645 l 3 02 8 . 9 0 1.1 3 7 ? p 3 .75 3 . 8 5 0.147 0.151 q2.65 2. 9 5 0.104 0.116
STP70N10 - std60n10 package mechanical data 9/12 dim. mm. inch min. typ max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.9 0.025 0.035 b4 5.2 5.4 0.204 0.212 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 d1 5.1 0.200 e 6.4 6.6 0.252 0.260 e1 4.7 0.185 e 2.28 0.090 e1 4.4 4.6 0.173 0.181 h 9.35 10.1 0.368 0.397 l 1 0.039 (l1) 2.8 0.110 l2 0.8 0.031 l4 0.6 1 0.023 0.039 r 0.2 0.008 v2 0 8 0 8 dpak mechanical data 0068772-f
packaging mechanical data STP70N10 - std60n10 10/12 5 packaging mechanical data tape and reel shipment dpak footprint dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters
STP70N10 - std60n10 revision history 11/12 6 revision history table 8. document revision history date revision changes 02-oct-2007 1 first release 15-feb-2008 2 inserted new data on ta b l e 4 , ta b l e 5 and ta bl e 6
STP70N10 - std60n10 12/12 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2008 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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